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SIAM offers you some examples of services according to the technique used.

Director | Julien Colaux Julien Colaux holds a PhD in physics. His expertise covers nuclear physics (ion beam analysis (IBA), ion implantation) and the development of thin films using PVD and PECVD.Contact: julien.colaux@unamur.be  Spokesperson | Pierre Louette Pierre Louette holds a PhD in physics and is a certified secondary school teacher. His expertise covers electron spectroscopy techniques (XPS, HREELS, EELS, etc.) and physics education.Contact: pierre.louette@unamur.be  IBA Expert | Paul-Louis Debarsy Contact: paul-louis.debarsy@unamur.be  Surface analysis expert | Alexandre Felten Contact: alexandre.felten@unamur.be   ALTAÏS Engineer | Tijani Tabarrant Contact: tijani.tabarrant@unamur.be  Senior Technician | Frédéric ComeAdministrative Assistant | Olivia Genot Contact | Technology platforms Synthesis, Irradiation, and Analysis of Materials (SIAM) siam@unamur.be

Contact | Technology platforms Synthesis, Irradiation, and Analysis of Materials (SIAM) siam@unamur.be

IBA uses MeV ion beams to probe the composition and obtain elemental depth profiles in the near-surface layer of solids.This technique enables: The analysis of the biodistribution and biopersistence (in vivo) of nanomaterials, their characterization and quantification;The characterization of thin-film materials and airborne particles;The study of phase transformation.For decades, the IBA has played a leading role in nuclear astrophysics, materials science, life sciences, heritage sciences, and archaeology.

Ion Beam Modification of Materials (IBMM) allows the electronic, optical, mechanical, or magnetic properties of various materials to be modified in a controlled manner. This is known as functionalizing materials.This process allows precise control of the composition and structure of materials at the atomic level, paving the way for applications in electronics, biomaterials, and specialized coatings.

Plasma sputteringA process in which energetic particles from a gas plasma bombard a solid target material, dislodging (sputtering) its atoms. These ejected atoms then deposit onto a substrate, forming an ultra-thin layer. This is a type of physical vapor deposition (PVD) used to create coatings and thin films for various applications, including semiconductor manufacturing, optical devices, and wear-resistant surfaces.4 chambers for plasma sputtering (DC, RF, and AC)Plasma functionalization Thin film deposition PECVD deposition PECVD (plasma-enhanced chemical vapor deposition) is a thin film deposition technique that uses plasma energy to activate gaseous precursors, causing them to react and form a solid film on a substrate. The main advantage of PECVD is that it operates at lower temperatures than conventional CVD, allowing high-quality films to be deposited on temperature-sensitive materials and creating various insulating, protective, and electronic layers in the fields of microelectronics, optics, and packaging.4 chamber for PECVD deposition and functionalization Powder processing Other related equipment and technologies Image IBA - Ion Beam Analysis See content Image IBMM - Ion Beam Modification See content Image ToF-SIMS - Time-of-flight secondary ion mass spectroscopy See content Image XPS - X-ray Photoelectron Spectroscopy See content

The ToF-SIMS (time-of-flight secondary ion mass spectroscopy) technique can be used to determine the elemental and molecular composition of a sample's surface. It is also very useful for creating 2D maps (from µm2 to cm2) and depth profiles (using a sputtering gun).The advantages are:High mass resolutionHigh lateral and depth resolution (200 nm and 1 nm)High sensitivity (ppm)Parallel detection of all ionsElemental, isotopic, and molecular identification3 analysis modes: spectrometry, imaging, depth profiling

The XPS technique can be used to detect elements present on the surface of samples, determine their atomic concentration and chemical state (e.g., C-C, C-O, C-F or oxidation states). It is also possible to perform depth profiling to determine the atomic concentration of multilayers.

In 2025–2026, the UNamur School of Law has the honor and privilege of welcoming Professor Delphine Misonne as the recipient of a Francqui Chair awarded by the Francqui Foundation: “Need for the Environment, Need for Law?” Delphine Misonne is an FNRS Research Fellow, Professor at UCLouvain, Director of CEDRE, and a member of the Royal Academy of Belgium.The organization of this lecture is fully aligned with the Faculty of Law’s overarching theme dedicated to the environment, nature, and our earth—the very foundation of life: “Re-enchanting the Earth.” 

Pierre AssenmakerSandrine BiémarLouis CarréJérémy DodeigneCatherine GuirkingerWafa HammediErika Lombart (ADRE)Laurence MeurantLouis Escouflaire (research logistician)

Jean-François Colomer | Department Manager Corry Charlier | Engineer Caroline De Bona | Technician

1) JEOL 6010LV RESOLUTIONHigh vacuum mode 4.0 nm at 20 kV 8.0 nm at 3 kV 15.0 nm at 1 kVLow vacuum mode 5.0 nm at 20 kVGROSSISSISSION 8X to x 300kXIMAGING MODEsecondary electron (SEI)backscattered electron (BEI) QUANTAX SDD energy-selective X-ray microanalyzer and Detector for backscattered electron diffraction (EBSD) e-Flash QUANTAX from BRUKEREnergy resolution < 129 eV at MnKaSize 30 mm²Effect-cooledExcellent performance in light and low-energy elements, B - Am element rangeCMOS imagingImage resolution: 720 x 540 pixelSpeed: up to 520 frames/second (fps)Data acquisition and processing are carried out using the same interface. 2) JEOL 7500F RESOLUTION1.0 nm at 15 kV1.4 nm at 1 kV (Gentle beam mode)2.0 nm at 1 kV (SEM mode)GROSSISSING25X to 1000kXIMAGINGODESin secondary electrons (2 detectors SEI or LEI)backscattered electrons (LABE)transmitted electrons (TED)ACCELERATION POTENTIALEMS mode: 0.5 to 30 kV (in 10 V steps from 0.5 to 2.9 kV and in 100 V steps from 2.9 to 30 kV)GB mode: 0.1 to 4 kV (in 100V steps) Energy-selective X-ray microanalyzer JED-2300FDetector: Ultra Nine 30Size 30 mm²Liquid nitrogen cooling (Dewar 9.5 l)Resolution better than 138 eV (FWHM) on the Ka manganese lineDetection from Boron to Uranium